? semiconductor components industries, llc, 2013 september, 2013 ? rev. 11 1 publication order number: mjl3281a/d mjl3281a (npn) MJL1302A (pnp) complementary bipolar power transistors features ? exceptional safe operating area ? npn/pnp gain matching within 10% from 50 ma to 5 a ? excellent gain linearity ? high bvceo ? high frequency ? these devices are pb ? free and are rohs compliant* benefits ? reliable performance at higher powers ? symmetrical characteristics in complementary configurations ? accurate reproduction of input signal ? greater dynamic range ? high amplifier bandwidth applications ? high ? end consumer audio products ? home amplifiers ? home receivers ? professional audio amplifiers ? theater and stadium sound systems ? public address systems (pas) maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 260 vdc collector ? base voltage v cbo 260 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 260 vdc collector current ? continuous i c 15 adc collector current ? peak (note 1) i cm 25 adc base current ? continuous i b 1.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 watts w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.625 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. mjlxxxxa ayywwg device package shipping ordering information to ? 264 case 340g style 2 2 1 15 amperes complementary silicon power transistors 260 volts 200 watts 3 marking diagram xxxx = 3281 or 1302 a = location code yy = year ww = work week g = pb ? free package 1 base 2 collector 3 emitter http://onsemi.com mjl3281ag to ? 264 (pb ? free) 25 units/rail MJL1302Ag to ? 264 (pb ? free) 25 units/rail *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
mjl3281a (npn) MJL1302A (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 260 ? vdc collector cutoff current (v cb = 260 vdc, i e = 0) i cbo ? 50 adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo ? 5 adc second breakdown second breakdown collector with base forward biased (v ce = 50 vdc, t = 1 s (non ? repetitive) (v ce = 100 vdc, t = 1 s (non ? repetitive) i s/b 4 1 ? ? adc on characteristics dc current gain (i c = 500 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) h fe 75 75 75 75 45 150 150 150 150 ? collector ? emitter saturation voltage (i c = 10 adc, i b = 1 adc) v ce(sat) ? 3 vdc dynamic characteristics current ? gain ? bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t 30 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? 600 pf
mjl3281a (npn) MJL1302A (pnp) http://onsemi.com 3 i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp MJL1302A f, current bandwidth product (mhz) t npn mjl3281a i c , collector current (amps) 0.1 1.0 10 50 40 30 20 10 0 60 40 30 0 10 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 20 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 50 figure 3. dc current gain figure 4. dc current gain h fe , dc current gain i c , collector current (amps) pnp MJL1302A npn mjl3281a 1000 100 10 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5.0 v 100 typical characteristics figure 5. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 6. typical saturation voltages i c , collector current (amps) saturation voltage (volts) pnp MJL1302A npn mjl3281a 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0 100 10 1.0 0.1 0.5 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 0.05 h fe , dc current gain i c , collector current (amps) 1000 100 10 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5.0 v 100 0.05
mjl3281a (npn) MJL1302A (pnp) http://onsemi.com 4 typical characteristics figure 7. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 8. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) pnp MJL1302A npn mjl3281a 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) figure 9. MJL1302A typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 10. mjl3281a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob pnp MJL1302A npn mjl3281a figure 11. active region safe operating area v ce , collector-emitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce lim- its of the transistor that must be observed for reliable opera- tion; i.e., the transistor must not be subjected to greater dissip- ation than the curves indicate. the data of figure 11 is based on t j(pk) = 150 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. 100 10 1.0 0.1 100 10 1.0 1000 10 ms 50 ms 250 ms 1 sec
mjl3281a (npn) MJL1302A (pnp) http://onsemi.com 5 package dimensions style 2: pin 1. base 2. collector 3. emitter to ? 3pbl (to ? 264) case 340g ? 02 issue j dim a min max min max inches 28.0 29.0 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.2 ref 0.411 ref n 4.35 ref 0.172 ref p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.25 ref 0.089 ref u 6.3 ref 0.248 ref w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m tb s 123 ? b ? ? t ? q on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mjl3281a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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